| |
THE SWITCHING BEHAVIOUR OF AN IGBT IN ZERO CURRENT SWITCH MODE
| [View]
[Download]
|
| Author(s) |
S. Huth; S. Winternheimer |
| Abstract |
The IGBT is a useful device for resonant applications. Because of its bipolar conduction mode and its ability of blocking a reverse voltage it seems to be well suited to the zero current switching. Measurements in a quasi resonant configuration which works in a full wave mode show, that the switching losses are dependent on the time between the begin of current oscillation and the moment the IGBT is turned off. These losses are at a minimum when the channel of the IGBT is opened as long as possible. For the half wave mode it is shown that the stationary reverse blocking capability of a non-punch-through-IGBT can be improved by turning on the MOSFET-channel with a positive gate-source-voltage. |
| Download |
| Filename: | Unnamed file |
| Filesize: | 3.273 MB |
|
| Type |
Members Only |
| Date |
Last modified 2019-05-22 by System |
| |
 |