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SECOND BREAKDOWN AND LATCH-UP BEHAVIOR OF IGBTs
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| Author(s) |
K. Heumann; M. Quenum |
| Abstract |
The semiconductor structure of bipolar transistors can cause failures by second breakdown. Also power MOSFETs and new semiconductor devices like IGBTs with a parasitic npn-structure may be damaged by this mechanism. First generation IGBT with a parasitic thyristor inside the device are additionally contagious for the phenomenum of latch-up. Advances in technology improved the device characteristics. Modern IGBTs seem to be insusceptible for latch-up despite the still existing parasitic thyristor in their structure. This paper gives a short discussion of latch-up and second breakdown phenomena. IGBT of different semiconductor generations during latch-up under various conditions were investigated. A test circuit for these measurements is proposed. |
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| Filename: | Unnamed file |
| Filesize: | 2.873 MB |
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| Type |
Members Only |
| Date |
Last modified 2019-05-22 by System |
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