| Abstract |
Both static and dynamic characteristics of power diodes are effected by carrier lifetime, thickness and resistivity of the base region, doping profiles, etc. This paper presents results of the reverse recovery process simulation considering effects of carrier lifetime gradient and P-emitter concentration on the reverse recovery characteristics. For simulation, a model considering one-dimensional P+NN+ diode structure with assumed non-uniform carrier lifetime distribution has been used. The results of computations have been discussed from the viewpoint of parameter improvement of both P+NN+ diodes and integrated diode structures of SPEED type or MSP type with particular emphasis on soft recovery. |
