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AN OPTICALLY ACTIVATED SIT FOR HIGH VOLTAGE APPLICATIONS
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| Author(s) |
K. I. Nuttall; W. Chen |
| Abstract |
A twin grid Bipolar Mode SIT structure is proposed for use as an optically activated transistor with normally off electrical characteristics. The introduction of a second grid allows advantage to be taken of the high current gains obtainable from the SIT to produce a structure that combines high responsivity with a high blocking voltage capability. Computer simulation results are presented to indicate the capabilities of the device and the consequences of certain design changes are investigated. |
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| Filename: | Unnamed file |
| Filesize: | 2.886 MB |
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| Type |
Members Only |
| Date |
Last modified 2019-05-22 by System |
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