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	LOW SWITCHING LOSS FOUR ELECTRODE GTO THYRISTOR	[View]   [Download]
Author(s)	J. Arnould; D. Lafore
Abstract	In view of improving switching performance of GTO Thyristor a four electrode device - cathode, anode, two gates - is developed and investigated. Structure specific features: - all planar technology - finely interdigited cathode (40 or 100 "microns" finger widths) - anode gate available on anode side (same pattem as gate cathode side one) - vertical profil: assymetric or not - switching capability 80 A 1000 V It is shown an improvement of at least a factor 2 in terms of switch off loss. A brief process description is given and a complete circuit equipment described. Experimental results are presented and discussed.
Download	Filename: Unnamed file Filesize: 2.21 MB
Type	Members Only
Date	Last modified 2019-05-22 by System