| Abstract |
The numerical physical models of power semiconductor devices, based on a solution of the full set of semiconductor equations, are an efficient tool in the CAD technic. Till now a lot of such numerical models, both 1-D and 2-D, have been reported, but only a few of them included thermal phenomena. The introduction of inner feed-back between electrical and thermal phenomena into the models involves some technical problem arising from the fact that in such a model only a small part of the device, limited to the semiconductor chip, is considered, whereas the thermal properties of the device are determined, to a high degree, by its other parts. In the paper a new approach to heat transfer modeling in electrothermal physical models, called a hybrid approach, is presented. It consists in connecting in one thermal submodel both a numerical simulation of heat transfer in the area of semiconductor chip and a non-numerical simulation (based on thermal resistance conception) in the other parts of the device . The presentation is illustrated by some examples of results obtained by means of an electrothermal model of thyristor structure worked out by the author. |
