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TRANSIENT THERMAL EFFECTS DURING TURN OFF IN GTO DEVICES
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Author(s) |
P. A. Mawby; M. S. Towers; M. Evans; Z. Hu; K. Board |
Abstract |
A rigorous two-dimensional physical model of the GTO thyristor is presented. The model includes the fully coupled effects of self heating of the device during the turn-off phase of operation. The effects of spatially dependent minority carrier lifetime, Auger recombination and carrier-carrier scattering are included in the model. The simulation can be carried out within a realistic external circuit environment. |
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Filename: | Unnamed file |
Filesize: | 3.195 MB |
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Type |
Members Only |
Date |
Last modified 2019-05-15 by System |
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