| |
ELECTRON BEAM TECHNOLOGY FOR POWER SEMICONDUCTOR DEVICE FABRICATION
| [View]
[Download]
|
| Author(s) |
V. A. Zlobin |
| Abstract |
The adaptation of electron beam lithography and electron beam testing techniques for production of new power semiconductor devices and some of its applications are presented. An approach is developed to decrease information volume for exposition of large chips by electron beam lithography. The computer arrangement of electron beam system and the scheme of data preparation for the electron beam lithography are proposed. It is shown that method of electron beam induced current permits to observe the 3-dimensional image of gate p-n junction in SIT structure. Electron beam testing technique is developed to measure the current gain distribution in power bipolar transistor and IGBT chips. |
| Download |
| Filename: | Unnamed file |
| Filesize: | 2.659 MB |
|
| Type |
Members Only |
| Date |
Last modified 2019-05-14 by System |
| |
 |