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A SIMPLE OPTICAL METHOD OF IN-PROCESS CHECKING OF GTO UNIFORMITY
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| Author(s) |
V. Benda; P. Spur; J. Martinek |
| Abstract |
For reliable function of high-power GTO thyristors it is very important that the parallel-connected segments of the GTO structure be of the same characteristics, both static and dynamic. The presented paper deals with a study of homogeneity of large-area GTOs by measuring the current gains distribution over the GTO structure. The local current gains in individual segments of a large area GTO may be evaluated from the reverse current induced by light generated by a GaAs LED over the reverse biased thyristor structure. Measurements on all segments of a GTO structure under the condition of constant voltage between the gate and the anode enables us to evaluate the large area GTO homogeneity with respect to low injection carrier lifetime. The equipment developed enables to obtain the current gain distribution in a very short time and no cathode contact of any segment could be damaged during checking the GTO homogeneity. Hot spots found within the tested GTO structures were in good accordance with the prediction done by described method. |
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| Filename: | Unnamed file |
| Filesize: | 1.496 MB |
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| Type |
Members Only |
| Date |
Last modified 2019-05-14 by System |
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