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THE EFFECT OF RECOMBINATION CENTERS ON THE LIFETIME DEPENDENCE UPON TEMPERATURE AND INJECTION LEVEL
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| Author(s) |
A. Sanseverino; P. Spirito |
| Abstract |
In this paper the effect of the energy levels of the recombination centers from lifetime dependence versus temperature at both low and high injection levels is pointed-out, for case of single and multiple recombination levels. The temperature dependence of lifetime allows to evaluate the energy levels of the recombination centers by using a differential a.c. measurement technique. Here the above technique has been used for thick, low doped layer to detect the recombination centers present in "good" quality materials. The results show that the recombination centers in these materials are relatively shallow. |
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| Filename: | Unnamed file |
| Filesize: | 2.934 MB |
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| Type |
Members Only |
| Date |
Last modified 2019-05-14 by System |
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