| Abstract |
Experimental data on the effect of electron irradiation and annealings on the electric characteristics of high voltage power static induction transistors (BSITs) are given. The anneal behavior of radiation-induced defects in active areas of BSITs is discussed. A criterion of preference for centers, which controls lifetimes is suggested. The crlterion of preference fits the A-center. In addition, it is shown the processing gives best improvement of the
characteristics, when phosphorus impurity concentration severely exceeds oxygen concentratlon in the heavily doped Si substrata and oxygen content greatly exceeds carbon content in the epilayer. |
