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SWITCHING CHARACTERISTIC IMPROVEMENT OF MODERN GATE CONTROLLED DEVICES
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| Author(s) |
A. Galluzzo; M. Melito; G. Belverde; S. Musumeci; A. Raciti; A. Testa |
| Abstract |
The raising use of insulated gate devices, such as Power MOSFETs and IGBTs, in power electronic circuits is due to both the easy driving and the ability to handle high currents and voltages at high frequency. By increasing the switching speed it is possible to reduce the power dissipation although at the cost of an increased generation of electro-magnetic interferences (EMI). The aim of this paper is to illustrate a new driver circuit topology that allows to obtain an acceptable compromise between switching speed, power dissipation and electro magnetic irradiation. The paper starts with an analysis of voltage and current switching waveforms then points on those characteristics of the devices and driving circuils that influence the switching speed and finally shows how to control voltage and current slopes independently by using a suitable driving technique. |
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| Filename: | Unnamed file |
| Filesize: | 3.341 MB |
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| Type |
Members Only |
| Date |
Last modified 2019-05-13 by System |
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