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A NEW FABRICATION TECHNIQUE OF GaAs POWER DEVICES USING LIQUID PHASE EPITAXY
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| Author(s) |
T. Sukegawa; M. Suzuki; M. Kimura; T. Kamiya; A. Tomita; A. Tanaka |
| Abstract |
The initial results of epitaxial growth of a thick heavily doped GaAs layer on a low-impurity GaAs wafer by LPE technique and its application to fabrication of pin diodes are presented. The major results indicate that the lattice constant of the p+ (Ge-doped) epilayer can be fit to that of low-impurity wafer and that it is possible to use the near intrinsic layer with a desirable thickness as the active region of power devices. It was confirmed that the pin diode with a thick high purity layer had the abilities of photodetection and emission in the near infrared region. It is ascertained that the LPE technique using the lattice compensation effect is the promising technique for the fabrication of the GaAs power devices. |
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| Filename: | Unnamed file |
| Filesize: | 3.059 MB |
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| Type |
Members Only |
| Date |
Last modified 2019-05-07 by System |
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