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THEORY AND TECHNOLOGY OF PIN-DIODES ON GaAs
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| Author(s) |
F. G. Della Corte; G. Schweeger; G. Cocorullo; H. L. Hartnagel; G. F. Vitale |
| Abstract |
A contribution to the theory and technology of pin diodes on GaAs is made. Such diodes have been produced by zinc thermal diffusion or berillium implantation. In order to reduce the interaction of Ga and Au at the backside ohmic contact, a diffusion barrier of WSi2 bas been used, which improved the reliability of the devices at the higher temperatures. They were measured at temperatures up to 300°C and comparisons with an analytical model developed by the authors, which is briefly outlined, revealed very good correlation from low to high injections rates. The model could therefore be used to determine important useful parameters. The expected degradation of diodes during an accelerated lifetime test at 300°C with additional electrical stress could not be observed. |
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| Filename: | Unnamed file |
| Filesize: | 2.996 MB |
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| Type |
Members Only |
| Date |
Last modified 2019-05-07 by System |
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