| |
POWER LOSSES IN SILICON AND SILICON CARBIDE DIODES
| [View]
[Download]
|
| Author(s) |
S. H. Gamal; M. L. Locatelli; J. P. Chante |
| Abstract |
The power losses as function of junction temperature of two diodes of the same order of magnitude of the breakdown voltage have been compared in a ramp switching under the same operating conditions. One diode is a fast p-i-n silicon diode, and the other is a silicon carbide one. The turn-off losses were less for the SiC diode only for high temperafure, while the forward losses were higher over the whole temperature range. A considerable improvement in the turn-on behaviour, as well as in the reverse characteristics for the SiC diode was evident, leading to negligible losses. |
| Download |
| Filename: | Unnamed file |
| Filesize: | 2.347 MB |
|
| Type |
Members Only |
| Date |
Last modified 2019-05-07 by System |
| |
 |