| Abstract |
Recent advances in two and three terminal power devices are reviewed. In the case of rectifiers, the combination of Schottky barriers with P-N junctions has led to significantly better characteristics. In the case of three-terminal switches, the power MOSFET and IGBT have been replacing the bipolar transistor due to ease of control. Further advances in silicon power devices are anticipated by the creation of MOS-gated thyristor structures. The availability of these MOS-gated devices is also enabling the formation of smart power ICs. On a longer time scale, silicon carbide based devices could replace the entire spectrum of silicon power devices. |
