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Surge Current Simulation in a Half Bridge using a Thermal Model
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| Author(s) |
Fabian HOHMANN |
| Abstract |
In this paper an IGBT half bridge with an antiparallel press-pack diode is examined for MMC use. Stateof-the-art half bridges use a bypass thyristor in order to protect the lower diode during a DC-short. Thispaper investigates prediction methods to calculate the stress of diode 2. Furthermore, it deals with thepossibility to substitute the bypass thyristor with a press-pack diode (PP-diode) to enhance to use of theequipped semiconductor area. |
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| Filename: | 0220-epe2018-full-10390183.pdf |
| Filesize: | 1.178 MB |
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| Type |
Members Only |
| Date |
Last modified 2019-05-05 by System |
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