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Realization of a monolithic multi-terminal Si-power chip integrating a 2-phase rectifier composed of vertical PiN diodes insulated by vertical P+ walls
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| Author(s) |
Adem LALE |
| Abstract |
This paper is within the context of mixed monolithic/hybrid integration of a generic multi-phase power converter (DC/AC or AC/DC). The technological results provided in this paper deal with the realization of a 300 µm deep P+ wall as well as with the realization of the monolithic 2-phase rectifier that consists of four vertical PiN diodes that are separated by P+ walls. These technological results are currently in use for the realization of a three terminal common cathode chip consisting of two RC-IGBTs as well as a monolithic H-bridge converter that consists of four RC-IGBTs. |
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| Filename: | 0340-epe2018-full-16455337.pdf |
| Filesize: | 1.499 MB |
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| Type |
Members Only |
| Date |
Last modified 2019-05-05 by System |
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