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Investigation of Optimal Conditions for Reducing Losses and Costs of Hybrid Switch Combining Si IGBT and SiC MOSFET in Power Conversion Devices
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| Author(s) |
Aiko KUBOTA |
| Abstract |
A hybrid switch configured by silicon insulated gate bipolar transistor (Si IGBT) and silicon carbide metal-oxide semiconductor field effect transistor (SiC MOSFET) achieves reduction of losses and costs. In this paper, it is discussed to utilize a hybrid switch for power conversion devices, aimed to reduce losses and increase the operating area. Characteristics of the hybrid switch in power conversion devices is determined to compare the proposed gate signal option with conventional one. As a result, it is confirmed that a hybrid switch reduce losses and increase the operating area under the adequate load current and gate signal option. |
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| Filename: | 0396-epe2018-full-01011142.pdf |
| Filesize: | 570.5 KB |
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| Type |
Members Only |
| Date |
Last modified 2019-05-05 by System |
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