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Influences of gate-circuit and parasitic inductances on turn-off current imbalances of paralleled IGBTs due to differences in their switching behaviour
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Author(s) |
Robin SCHRADER |
Abstract |
Despite the usage of IGBTs selected with parallelisation criteria, current imbalances can occur betweenthem during switching transients. Those imbalances can be amplified or reduced by the load- and gate-circuits even when the circuits are symmetrical. Their influences on imbalances during turn-OFF tran-sients are analysed and explained with the help of TCAD-simulations and measurements. Moreover, it isexplained in detail that a common auxiliary emitter connection is beneficial to reduce current mismatchesduring turn-OFF. |
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Filename: | 0280-epe2018-full-12241127.pdf |
Filesize: | 410.7 KB |
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Type |
Members Only |
Date |
Last modified 2019-05-05 by System |
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