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   Influences of gate-circuit and parasitic inductances on turn-off current imbalances of paralleled IGBTs due to differences in their switching behaviour   [View] 
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 Author(s)   Robin SCHRADER 
 Abstract   Despite the usage of IGBTs selected with parallelisation criteria, current imbalances can occur betweenthem during switching transients. Those imbalances can be amplified or reduced by the load- and gate-circuits even when the circuits are symmetrical. Their influences on imbalances during turn-OFF tran-sients are analysed and explained with the help of TCAD-simulations and measurements. Moreover, it isexplained in detail that a common auxiliary emitter connection is beneficial to reduce current mismatchesduring turn-OFF. 
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Filename:0280-epe2018-full-12241127.pdf
Filesize:410.7 KB
 Type   Members Only 
 Date   Last modified 2019-05-05 by System