| |
Improved performance of new fast recovery high voltage diode chip set of 3.3kV and 6.5kV
| [View]
[Download]
|
| Author(s) |
Ariful ISLAM |
| Abstract |
In this paper, the development of fast recovery 6.5 and 3.3 kV diode chip integrated in IGBT moduleis presented. Based on Dynex MAX-SOA technology, the newly developed diode chip set integratedin high power IGBT module exhibits a wider range of reverse recovery safe operating area whereconduction and reverse recovery characteristics have been optimized. |
| Download |
| Filename: | 0115-epe2018-full-18180346.pdf |
| Filesize: | 814.4 KB |
|
| Type |
Members Only |
| Date |
Last modified 2019-05-05 by System |
| |
 |