| Filename: | 0262-epe2018-full-14510575.pdf |
| Filesize: | 1.467 MB |
| Impacts of Diode Surge Currents on Reverse Conducting IGBT Controlled by Optimized Gate-Drive Unit | ||||||
| Author(s) | Daniel LEXOW | |||||
| Abstract | Diode surge currents constitute a challenging demand in any inverter structure. Especially, while using an improved gate-drive control for RC-IGBTs with an implemented blanking time to delay the transition from IGBT- to diode-mode. Therefore, HV-measurements with 6.5 kV RC-IGBTs were ac-complished to ensure safe operation of this particular gate-drive concept. Furthermore, a compensa-tion technique to avoid excessive forward recovery voltage drop is introduced. | |||||
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| Type | Members Only | |||||
| Date | Last modified 2019-05-05 by System | |||||
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