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Hysteresis Losses in the Output Capacitance of Wide Bandgap and Superjunction Transistors
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| Author(s) |
Dennis BURA |
| Abstract |
This paper deals with switching losses in modern power semiconductors due to a hysteresis in their output capacitance. A modified Sawyer-Tower circuit is presented, which is able to characterize this effect under large signal excitation. Three semiconductor types are analyzed: a Si superjunction MOSFET, a SiC MOSFET and a GaN HEMT. It is revealed that the output capacitance of these devices shows a hysteretic behavior which results in unavoidable losses even under zero voltage turn-on transitions. These losses become a major issue when pushing switching frequencies of power electronics into the megahertz range. |
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| Filename: | 0216-epe2018-full-13553078.pdf |
| Filesize: | 2.024 MB |
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| Type |
Members Only |
| Date |
Last modified 2019-05-05 by System |
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