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Galvanical Isolated Microinverter with GaN Transistors for Photovoltaic Modules
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| Author(s) |
Gilles ROUFFAUD |
| Abstract |
A microinverter with GaN transistors is presented in this work. It consists of two stages: a DC-DCstagewith HF galvanic isolation in combination with an inverter stage. High efficiency above 97.5 \%is reached in all stages. The weight of the demonstrator developed is 492 gr at 675 cm³. |
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| Filename: | 0060-epe2018-full-13224979.pdf |
| Filesize: | 463.2 KB |
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| Type |
Members Only |
| Date |
Last modified 2019-05-05 by System |
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