| Filename: | 0477-epe2018-full-11592601.pdf |
| Filesize: | 287.9 KB |
| Effect of P-type island on SEE failure in n-MOSFET | ||||||
| Author(s) | Yun TANG | |||||
| Abstract | A novel n-MOSFET structure with P-type island in the buffer layer is proposed and simulation studies have been performed in this paper. Simulation results show that the peak current induced by heavy ions can be reduced owing to field modification effects of P-type island. | |||||
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| Type | Members Only | |||||
| Date | Last modified 2019-05-05 by System | |||||
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