| Abstract |
Junction temperature cycles, caused by load changes in power electronics, lead to a decrease of the expected lifetime of power semiconductor devices. The reason is, that power semiconductor devices consist of different material layers with their own coefficient of thermal expansion. This again leads to mechanical strain. A junction temperature control system is able to counter these occurring temperature cycles. To realize a junction temperature control, a possibility to affect the junction temperature is required. Influencing the power losses while the power semiconductor device is working is a well-known method to affect the junction temperature. This paper presents investigations on the suitability of the dead time as a correction variable in order to vary the power losses. |
