| Abstract |
This paper studies the current imbalance of body diodes of parallel connected SiC-MOSFETs in a powermodule. The current imbalance is mainly caused by the difference of electrical characteristics of devices,and also the different values of parasitic impedance of circuit. In This paper, the current imbalance ofthe body diode of parallel connecter SiC-MOSFETs focusing on variations of parasitic inductance wasanalyzed by simulation, and confirmed by experiments. As a result, it was confirmed that the currentimbalance can be suppressed by decreasing the parasitic inductance value and bringing this ratio close to1:1. |
