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   Concept for an IGBT Desaturation Pulse to Reduce Turn-OFF Losses   [View] 
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 Author(s)   Daniel LEXOW 
 Abstract   This paper introduces an 'IGBT desaturation pulse' which tends to reduce turn-OFF losses for regular and Reverse Conducting IGBTs. Hereby, the effect of the desaturation pulse is compared between conventional IGBT-types and innovative 'low-saturation' IGBT-types with an increased emitter-sided plasma concentration due to injection enhancement. Device simulations for 6.5 kV IGBTs of both types, a gate control scheme to implement the IGBT desaturation pulse into the timing diagram as well as a proposal for a gate-drive unit are elaborated and presented. 
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Filename:0421-epe2018-full-22513599.pdf
Filesize:1.131 MB
 Type   Members Only 
 Date   Last modified 2019-05-05 by System