| Filename: | 0226-epe2018-full-11231772.pdf |
| Filesize: | 1.066 MB |
| Characterization of 1200 V RB-IGBTs with Different Irradiation Levels under Hard and Soft Switching Conditions | ||||||
| Author(s) | Andrei BLINOV | |||||
| Abstract | This paper presents characterisation of 1200 V, 25 A RB IGBT devices with various irradiation levels under hard and soft switching conditions using a double-pulse test circuit with an additional current clamp. The switching behaviour, particularly turn-on and turn-off characteristics, of these devices under various conditions are evaluated. Obtained results allow to assess the impact of irradiation level and di/dt on the conduction, turn-on and reverse recovery characteristics. | |||||
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| Type | Members Only | |||||
| Date | Last modified 2019-05-05 by System | |||||
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