| Abstract |
In recent years, oscillation phenomena are often observed in IGBT power modules at turn-on, turn-offand short-circuit. This oscillation phenomenon causes not only electromagnetic interference (EMI) toother electronic devices due to radiated electromagnetic waves but also a gate breakdown in the worstcase.According to experimental result, a high frequency oscillation during turn-on was observed in amodule with the combination of Si-IGBT and SiC schottky barrier diode. The oscillation was not seenwith the combination of Si-IGBT and Si-FWD. The oscillation was reproduced in simulation and theamplitude was depends on the large junction capacitance of SiC schottky barrier diode. |
