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	Analyses of the unbalanced paralleled GaN HEMT transistors	[View]   [Download]
Author(s)	Van-Sang NGUYEN
Abstract	Today, GaN HEMT transistors are widely used, however, the nominal current of the available devices is limited. To achieve a higher current, paralleling GaN is an interesting solution. This work focuses on the effects of the unbalanced designs which are significant on the dynamic phenomenon also on the thermal issues. Simulations and experimental results are presenting.
Download	Filename: 0114-epe2018-full-10042205.pdf Filesize: 1.81 MB
Type	Members Only
Date	Last modified 2019-05-05 by System