| Abstract |
Power supply systems for low voltage, high current applications often have a front-end ac-dc converterfollowed by an un-regulated input or a regulated input isolated dc-dc converter. This paper illustratesthe design, analysis and comparison of an un-regulated and a regulated input isolated dc-dc converterutilizing wide band-gap (WBG) devices. For the comparison and evaluation, SiC devices are used at theprimary side and GaN devices at the secondary side of the converter. Due to the high voltage (> 650V)requirement at the input side of the dc-dc converter, SiC MOSFETs are selected instead of GaN devices.The analysis reveals that for higher switch efficiency and smaller chip area, it is better to have a regulated input, isolated dc-dc converter. This paper also demonstrates that, by the usage of a regulated input isolated dc-dc converter half the switching power device chip area can be saved compared to an unregulated input dc-dc converter, thereby the cost of the converter can be reduced drastically. |
