| Abstract |
Based on a continuing progress of power semiconductor devices and
modules, an attempt is made to analyze the dynamics in the field of power
electronics. Although discrete devices, like the GTO, are likely to dominate high
power applications, possibly for another 10 years, FET-driven devices, llke the
IGBT, are expected to expand further into medium power applications. In addition,
economic reasons will promote the use of modules for applications involving
gradually higher power. Power integrated clrcuits and smart devices in turn might gain in volume but may remain limited in power due to disspation problems. |
