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Substrate Choice and Thermal Optimization of a Half-bridge Power Module based on Chip Scale GaN HEMTs
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| Author(s) |
Javier ACUNA |
| Abstract |
Packages of commercial Gallium-Nitride power semiconductors present increasingly small dimensionsto enable low parasitic inductance, increasing the heat flux density of the package and the challengesassociated with their thermal management. This paper compares between Printed Circuit Boards andDirect Copper Bonded as substrates for a Gallium Nitride based half-bridge from a thermal and reliabilitypoint of view. The layout for both substrates was numerically optimized and a compact thermal modelis proposed to compare both substrates. Measurement results confirm the modelling approach. Bothsubstrates were also analysed regarding their maximum operating temperature and expected thermalcycling capability. |
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| Filename: | 0426-epe2017-full-12000281.pdf |
| Filesize: | 449.4 KB |
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| Type |
Members Only |
| Date |
Last modified 2018-04-17 by System |
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