| Abstract |
SiC power devices offer a good chance to improve performance of impedance source converters;however, new challenges must be met. This paper presents a study on phenomena occurring due toparasitic capacitances of inductors in a high-frequency quasi-Z-source inverter. Rapid changes ofvoltage values caused by new, fast-switching SiC MOSFETs and Schottky diodes make this issueimportant. Negative influence of the parasitic capacitances on the quality of input current and on theamount of semiconductor switching losses is confirmed via precise Saber Sketch simulations andlaboratory experiments with a 100-kHz/6-kVA model. Furthermore, simple methods of minimizingthe parasitic capacitance values through means of isolation and winding techniques are discussed. |
