| Abstract |
The properties of SiC Power Mosfet transistors have been known for years and have been extensively described in the literature. Also, new generations of SiC transistors and diodes are being developed. Power Mosfet transistors are mainly used in power electronics applications in which such transistors operate as controlled switches. In this case, equipment design engineers focus their attention on current and voltage parameters, such as voltage drop across the device and transistor switching speed. Si Mosfet transistors are also sometimes used in analog power applications, e.g. signal amplifiers (acoustic amplifiers), electronic current sources or electronic loads. This article describes an example application of a SiC Mosfet transistor in a current source with capacity of up to 4A. A comparison is provided between static and dynamic characteristics of a current source circuit based on a Si Mosfet transistor and a SiC Mosfet. The article also describes laboratory tests carried out on an actual circuit. |
