| Abstract |
This paper investigates the switching performances of two state-of-the-art half-bridge SiC MOSFETmodules using a standard double pulse test methodology. A deliberate choice of the modules with thesame voltage and current ratings, the same packaging, but different stray inductances and capacitancesis made in order to give an insight into the influence of parasitics in the switching transients and energylosses. A circuit simulation is performed with varying stray parameters in an LTSpice to illustrate theimpact of parasitics in both voltage and current waveforms. Thereafter, a detailed comparison betweenthe two modules is presented at similar dv/dt and di/dt conditions through laboratory measurements. Theexperimental results confirm the simulation results, giving a clear message that parasitic capacitances andinductances hinder the fast switching potential of SiC power modules. Furthermore, the performance ofdevice with different voltage ratings can be anticipated using this parametric study. Thus, the analysisand understanding of parasitics, and their influence on switching performance is vital in the choice ofan appropriate SiC MOSFET module for a particular application. The present paper contributes in thisregard. |
