| Abstract |
An analysis of the failure modes due to short circuit on planar and trench $1200 V - 40 m\Omega$ SiC-MOSFETs is presented, including single and multiple events. Short circuit waveforms, energy, as well as electro-thermal simulations are presented, enabling the identification of the main root causes of failure. Results demonstrate similar performance regarding failure after turn-off (thermal runaway, gate) for both technologies, nevertheless the SiC-MOSFET trench variant showed superior response after multiple faults. |
