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Experimental Study on Fast-Switching Series-Connected SiC MOSFETs
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| Author(s) |
RAFAL KOPACZ |
| Abstract |
This paper presents an experimental study on series-connection of Silicon Carbide MOSFETs. The switching performance of two series-connected SiC MOSFETs rated at 1200 V and having on-state resistances of 80 m_ was tested using a double-pulse test circuit at blocking voltages up to 1 kV DC and currents up to 50 A. The design and experimental validation of a suitable double-pulse test setup and gate drive circuits are also shown. Moreover, the impact of additional DRC snubbers ensuring an equal voltage sharing among the series-connected transistors is also investigated. |
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| Filename: | 0506-epe2017-full-11294437.pdf |
| Filesize: | 691.6 KB |
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| Type |
Members Only |
| Date |
Last modified 2018-04-17 by System |
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