| Abstract |
MOSFET devices have a body diode that allows reverse conduction, additionally, when a negative drainsourcevoltage is present, the MOSFET channel conduction can also be controlled by applying a gatesourcevoltage above the threshold voltage level. In a three phase inverter this results in parallel conductionof the diode and MOSFET when voltage and current differ in sign. This paper analyzes the beneficialeffect of parallel operation of the two devices, taking into account the blanking time, on the conductionlosses and total efficiency for a three phase SiC MOSFET inverter for traction application in electrifiedvehicles. The losses of the inverter are derived and presented as an analytical expression and comparedwith a numerical implementation showing a perfect match of the two. The total losses and efficiency ofthe inverter are derived and analyzed with and without reverse conduction for different operating points. |
