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Design and construction of a DAB using SiC MOSFETs with an isolation of 24 kV for PET applications
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| Author(s) |
Mariam SAEED HAZKIAL GERGES |
| Abstract |
This paper analyzes the design and construction of a SiC-based Dual Active Bridge (DAB) converterfor its use in a three-stage Power Electronic Transformer (PET) based on a Modular MultilevelConverter (MMC). The galvanic isolation between primary and secondary of the PET provided by theDAB High Frequency Transformer (HFT) is 24 kV. Challenges for the HFT design are discussed. A 5kW DAB prototype using commercial 1.2-kV SiC MOSFETs is built to confirm the correctness of thedesign process. Parallelization of the DAB HFT to increase the power being transferred is also discussed. |
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| Filename: | 0347-epe2017-full-15285373.pdf |
| Filesize: | 1.049 MB |
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| Type |
Members Only |
| Date |
Last modified 2018-04-17 by System |
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