| Filename: | 0546-epe2017-full-15304634.pdf |
| Filesize: | 1.328 MB |
| DC-DC power converter with Gallium Nitride Gate Injection Transistors | ||||||
| Author(s) | Leszek WYDZGOWSKI | |||||
| Abstract | In this paper, DC-DC power converter based on Galium Nitride Gate Injection Transistors (GaN GIT)is presented. The use of such power devices allows to increase of switching frequency and to reachhigh efficiency. Efficiency measurements of power conversion were carried out for two switchingfrequencies (100 kHz, 200 kHz, 400 kHz). | |||||
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| Type | Members Only | |||||
| Date | Last modified 2018-04-17 by System | |||||
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