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Comparison of SiC MOSFET gate-drive concepts to suppress parasitic turn-on in low inductance power modules
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| Author(s) |
Andreas MAERZ |
| Abstract |
In this paper different gate drive concepts to eliminate parasitic turn-on for SiC MOSFETs are discussed. Experimental results show a potential for lowering switching losses of SiC MOSFETs during fast switching operation, reduction of turn-off overvoltage across the bodydiode. Finally increased requirement on the gate drive unit are discussed. |
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| Filename: | 0183-epe2017-full-12502762.pdf |
| Filesize: | 1.9 MB |
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| Type |
Members Only |
| Date |
Last modified 2018-04-17 by System |
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