| Filename: | 0600-epe2017-full-15530554.pdf |
| Filesize: | 2.711 MB |
| Comparative analysis of GaN HEMT vs. Si CoolMOS for a High-Frequency MMC Topology | ||||||
| Author(s) | ANDER AVILA | |||||
| Abstract | The performance of a Modular Multilevel Converter (MMC) is presented in this paper, comparing Silicon(Si) and Gallium Nitride (GaN) semiconductors. Moreover, the benefits of high-frequency operation ina MMC topology are analysed along with a power loss distribution evaluation, highlighting the mainadvantages and drawbacks of different semiconductor technologies. | |||||
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| Type | Members Only | |||||
| Date | Last modified 2018-04-17 by System | |||||
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