| Abstract |
The authors present a low-cost, low-complexity measurement technique based on S-Parameters to characterize the intrinsic capacitances of power transistors at high voltages. In contrast to LCR-meter based standard solutions, which require at least three different measurement fixtures for that purpose, this method requires only one. Thus, measurement time and complexity of the transistor's characterization process is drastically reduced. An analysis of the accuracy of the proposed measurement technique is included, obtaining promising and reliable results. |
