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A Temperature Compensated Overcurrent and Short-Circuit Detection Method for SiC MOSFET modules
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| Author(s) |
Teresa BERTELSHOFER |
| Abstract |
This paper presents an overcurrent and short-circuit (SC) detection method for high current SiC MOSFET modules. It adapts the existing desaturation detection (=UCE,desat method) known from IGBTs. These adjustments include separate detection paths for hard switching faults (HSF) and fault under load (FUL) as well as overcurrent. The necessity of a junction temperature compensation for detecting each type of fault (HSF, FUL or overcurrent = OC) is discussed. |
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| Filename: | 0436-epe2017-full-21435590.pdf |
| Filesize: | 1.025 MB |
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| Type |
Members Only |
| Date |
Last modified 2018-04-17 by System |
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