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TRANSIT-TIME OSCILLATIONS DURING INDUCTIVE TURN-OFF OF POWER BJT
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| Author(s) |
Gianfranco Vitale; Giovanni Busatto; Luigi Fratelli |
| Abstract |
Numerical simulation of inductive turnoff transient of power bipolar transistors with narrow (50p.m) cellular structure, revealed that, under suitable drive conditions, high frequency oscillations develop, similar to the IMPATT
phenomenon [8] in p-i-n diodes. These oscillations can be a possible origin of device failure that is observed experimentally during the voltage rise in modern BJT's. |
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| Filename: | Unnamed file |
| Filesize: | 283.6 KB |
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| Type |
Members Only |
| Date |
Last modified 2018-04-12 by System |
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