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NEW HIGH VOLTAGE SWITCHES: SPONTANEOUSLY FIRED MOS-THYRISTOR DEVICES
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| Author(s) |
J-L. Sanchez; J. Rios; R. Berriane; J. Jalade; P. Austin |
| Abstract |
In this paper, two new spontaneously fired MOS-thyristor devices based on the concept of functional integration are investigated. The influence of their physical and technological parameters on the main electrical characteristics has been analyzed using the PISCES software. An optimized fabrication process using SUPREM IV is proposed and the first test structures have been fabricated. The study and the design of these devices are a first step in the integration of the dual thyristor function. |
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| Filename: | Unnamed file |
| Filesize: | 347 KB |
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| Type |
Members Only |
| Date |
Last modified 2018-04-12 by System |
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