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A NEW TEST BENCH FOR HIGH POWER TURN-OFF SEMICONDUCTOR DEVICES
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| Author(s) |
A. Steimel; J. Teigelkötter |
| Abstract |
A new test bench for high power turn-off semiconductor devices (GTO, IGBT, MCT, ... ) is described which allows to investigate the switching characteristics of high power devices and the behaviour of snubber circuits under conditions encountered in practical applications. In single-shot operation the junction temperature of the device under test (D.U.T.) can be controlled from -40°C up to +125°C. The turn-on and the turn-off behaviour of the GTOs and the stress of the snubber diodes in the low-loss asymmetrical snubber circuits used in recent high-power locomotive inverters are described and documented with measured results. The reverse recovery of the main feedback diode producing considerable losses is explained. The principal switching waveforms in the asymmetric and the symmetric low-loss snubber circuit are compared. |
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| Filename: | Unnamed file |
| Filesize: | 385.1 KB |
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| Type |
Members Only |
| Date |
Last modified 2018-04-12 by System |
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