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CAUSES AND MECHANISMS OF SEMICONDUCTOR DEVICE FAILURES IN POWER CONVERTER SERVICE CONDITIONS
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| Author(s) |
S. Januszewski; M. Kociszewska-Szczerbik; H. Swiatek, G. Swiatek |
| Abstract |
Identification of causes of power semiconductor device failure in service conditions provides an important information on problems of converter circuit design, manufacture and
operation. Main failure mechanisms of GTO thyristors, IGBT transistors and power MOSFET are presented. Expert systems used in power semiconductor device failure analysis are discussed. |
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| Filename: | Unnamed file |
| Filesize: | 491.5 KB |
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| Type |
Members Only |
| Date |
Last modified 2018-04-12 by System |
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